gl05t to gl24t www.vishay.com vishay semiconductors rev. 1.9, 26-feb-13 1 document number: 85809 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 low capacitance esd protection diodes for high-speed data interfaces marking (example only) bar = cathode marking yyy = type code (see table below) xx = date code features ? iec 61000-4-5 (lightning) see i ppm below ? esd-protection acc. iec 61000-4-2 8 kv contact discharge 15 kv air discharge ? sot-23 package ? high temperature soldering guaranteed: 260 c/10 s at terminals ? low capacitance for hi gh speed data lines, cellular handsets, usb port protection, lan equipment, peripherals ? aec-q101 qualified ?e3 - sn ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 20512 1 17416 1 2 3 20357 yyy xx xx ordering information part number (example) environmental and quality code packaging code ordering code (example) aec-q101 qualified rohs-compliant + lead (pb)-free terminations tin plated 3k per 7" reel (8 mm tape), 15k/box = moq 10k per 13" reel (8 mm tape), 10k/box = moq standard green gl05t- e 3 -08 gl05t-e3-08 gl05t- g 3 -08 gl05t-g3-08 gl05t- h e 3 -08 gl05t-he3-08 gl05t- h g 3 -08 gl05t-h g3-08 gl05t- e 3 -18 gl05t-e3-18 gl05t- g 3 -18 gl05t-g3-18 gl05t- h e 3 -18 gl05t-he3-18 gl05t- h g 3 -18 gl05t-h g3-18 package data device name package name type code environmental status weight molding compound flammability rating moisture sensitivity level soldering conditions gl05t sot-23 l05 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals l06 green 8.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gl12t sot-23 l12 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals l13 green 8.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gl15t sot-23 l15 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals l16 green 8.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals gl24t sot-23 l24 standard 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals l25 green 8.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals
gl05t to gl24t www.vishay.com vishay semiconductors rev. 1.9, 26-feb-13 2 document number: 85809 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 the glxxt contains an avalanche diode (pin 3-1) and a switching di ode (pin 3-2). with pin 1 connected to the signal or data lin e and pin 2 connected to ground both diodes are in series (p in 3 remains unconnected). the big and robust avalanche diode, driven in reverse di rection, provides the working range v rwm of 5 v, 12 v, 15 v or 24 v. due to its size the capacitance of the avalanche diode is in the range of typ. 260 pf (gl05t) and 65 pf (gl24t). the small switching diode in series has a low capacitance of just 2.5 pf (typ.). as both diodes are in seri es (with pin 3 not connected) the total capacitance of both diode s measured between pin 1 and 2 is as low as the capacitance of the switching diode. before the glxxt can provide this low capacitance the big capaci tance of the avalanche diode has to be charged up with the first signal or data pulses. this is usually no problem for digital signals like usb or other data ports. with the glxxt a signal or data line can be protected against posi tive transients only. for ne gative transients another glxxt can be used to provide a back path for the negative transients as well. absolute maximum ratings gl05t parameter test conditions symbol value unit peak pulse current 8/20 s pin 1-2 (pin 3 n.c.) i ppm 25 a peak pulse power 8/20 s waveform p pp 300 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 8 kv air discharge acc. iec 61000-4-2; 10 pulses 15 kv blocking voltage i b = 1 a pin 2-1 or pin 2-3 v b 70 v operating temperature junction temperature t j - 55 to + 150 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gl12t parameter test conditions symbol value unit peak pulse current 8/20 s pin 1-2 (pin 3 n.c.) i ppm 12 a peak pulse power 8 /20 s waveform p pp 300 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 8 kv air discharge acc. iec 61000-4-2; 10 pulses 15 kv blocking voltage i b = 1 a pin 2-1 or pin 2-3 v b 70 v operating temperature junction temperature t j - 55 to + 150 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gl15t parameter test conditions symbol value unit peak pulse current 8/20 s pin 1-2 (pin 3 n.c.) i ppm 10 a peak pulse power 8 /20 s waveform p pp 300 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 8 kv air discharge acc. iec 61000-4-2; 10 pulses 15 kv blocking voltage i b = 1 a pin 2-1 or pin 2-3 v b 70 v operating temperature junction temperature t j - 55 to + 150 c storage temperature t stg - 55 to + 150 c absolute maximum ratings gl24t parameter test conditions symbol value unit peak pulse current 8/20 s pin 1-2 (pin 3 n.c.) i ppm 5a peak pulse power 8 /20 s waveform p pp 300 w esd immunity contact discharge acc. iec 61000-4-2; 10 pulses v esd 8 kv air discharge acc. iec 61000-4-2; 10 pulses 15 kv blocking voltage i b = 1 a pin 2-1 or pin 2-3 v b 70 v operating temperature junction temperature t j - 55 to + 150 c storage temperature t stg - 55 to + 150 c
gl05t to gl24t www.vishay.com vishay semiconductors rev. 1.9, 26-feb-13 3 document number: 85809 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 3 ground data line n.c. 3 ground data line n.c. 3 n.c. ground data line n.c. n.c. uni unidirectional clamping performance for po s itive tran s ient s only. bi s y bi directional and s y mmetrical clamping performance for po s itive and negative tran s ient s . bias bi directional and as ymmetrical clamping performance for po s itive and negative tran s ient s . 2 1 1 2 2 1 3 1 2 1 2 3 electrical characteristics gl05t (t amb = 25 c unless otherwise specified) pin 1 to pin 2; pin 3 not connected parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse stand-off voltage v rwm --5v reverse voltage at i r = 20 a v r 5--v reverse current at v r = 5 v i r --20a reverse breakdown voltage at i r = 1 ma v br 6.9 7.5 8.0 v reverse clamping voltage at i pp = 1 a v c --9.8v at i pp = 5 a - - 11 v capacitance at v r = 0 v; f = 1 mhz c d -2.55pf electrical characteristics gl12t (t amb = 25 c unless otherwise specified) pin 1 to pin 2; pin 3 not connected parameter test conditions/remarks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse stand-off voltage v rwm --12v reverse voltage at i r = 1 a v r 12 - - v reverse current at v r = 12 v i r --1a reverse breakdown voltage at i r = 1 ma v br 13.3 14.3 17.2 v reverse clamping voltage at i pp = 1 a v c --19v at i pp = 5 a - - 24 v capacitance at v r = 0 v; f = 1 mhz c d -2.55pf electrical characteristics gl15t (t amb = 25 c unless otherwise specified) pin 1 to pin 2; pin 3 not connected parameter test conditions/rem arks symbol min. typ. max. unit protection paths number of li nes which can be protected n channel --1lines reverse stand-off voltage v rwm --15v reverse voltage at i r = 1 a v r 15 - - v reverse current at v r = 15 v i r --1a reverse breakdown voltage at i r = 1 ma v br 16.7 17.7 22 v reverse clamping voltage at i pp = 1 a v c --24v at i pp = 5 a - - 33 v capacitance at v r = 0 v; f = 1 mhz c d -2.55pf
gl05t to gl24t www.vishay.com vishay semiconductors rev. 1.9, 26-feb-13 4 document number: 85809 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward current i f vs. forward voltage v f fig. 2 - typical forward current i f vs. forward voltage v f fig. 3 - typical reverse voltage v r vs. reverse current i r electrical characteristics gl24t (t amb = 25 c unless otherwise specified) pin 1 to pin 2; pin 3 not connected parameter test conditions/remarks symbol min. typ. max. unit protection paths number of lines which can be protected n channel --1lines reverse stand-off voltage v rwm --24v reverse voltage at i r = 1 a v r 24 - - v reverse current at v r = 24 v i r --1a reverse breakdown voltage at i r = 1 ma v br 26.7 28.2 33 v reverse clamping voltage at i pp = 1 a v c --43v at i pp = 5 a - - 55 v capacitance at v r = 0 v; f = 1 mhz c d -2.55pf 10 100 1 0.01 0.1 0.001 0.2 0.4 0.6 0.8 1 pin 3 - 2 i f in ma v f in v 10 100 1 0.01 0.1 0.001 0.5 0.6 0.7 0.8 0.9 pin 3 - 1 i f in ma v f in v v r in v i r in a 30 35 15 20 25 5 10 15 0 0.01 0.1 1 10 100 1000 10 000 100 000 g l24t g l15t g l05t g l12t t j = 25 c pin 1 - 3
gl05t to gl24t www.vishay.com vishay semiconductors rev. 1.9, 26-feb-13 5 document number: 85809 for technical questions, contact: esdprotection@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sot-23 foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.) s ot-23 top view unreeling direction orientation in carrier tape s ot-23 s 8-v-3929.01-006 (4) 04.02.2010 22607
sot-23 vishay semiconductors sot-23 document number: 84004 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.3, 01-jul-10 diodes americas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 28 package dimensions in millimeters (inches) foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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